PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* High gain
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-4.5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-15
-28
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-20
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-12V
V
CB
=-12V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-50
-100
-220
-100
-150
-300
mV
mV
mV
I
C
=-500mA, I
B
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-930
-1050 mV
I
C
=-5A, I
B
=-200mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-830
-1000 mV
IC=-5A, V
CE
=-1V*
E-Line
TO92 Compatible
ZTX968
3-333
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Static Forward Current
Transfer Ratio
h
FE
300
300
200
150
450
450
300
240
50
1000
I
C
=-10mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
Transition Frequency
f
T
80
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
161
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
120
116
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
ZTX968
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
ermal R
e
si
s
t
a
n
ce (
C
/
W
)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Case te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-334
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* High gain
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-4.5
A
Practical Power Dissipation*
P
totp
1.58
W
Power Dissipation at T
amb
=25C
P
tot
1.2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-15
-28
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-20
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
A
V
CB
=-12V
V
CB
=-12V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-50
-100
-220
-100
-150
-300
mV
mV
mV
I
C
=-500mA, I
B
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-930
-1050 mV
I
C
=-5A, I
B
=-200mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-830
-1000 mV
IC=-5A, V
CE
=-1V*
E-Line
TO92 Compatible
ZTX968
3-333
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Static Forward Current
Transfer Ratio
h
FE
300
300
200
150
450
450
300
240
50
1000
I
C
=-10mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
Transition Frequency
f
T
80
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
161
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
120
116
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
C/W
C/W
ZTX968
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T
-Temperature
(C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
ermal R
e
si
s
t
a
n
ce (
C
/
W
)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t
1
t
P
D=t
1
/t
P
Case te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-334
1m
100
1m
100
1m
100
100
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
0.4
0.8
+25 C
-55 C
800
400
+100 C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25 C
+100 C
1.4
0.7
-55 C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+25 C
-55 C
+100 C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100 C
+25 C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
V
+-
=1V
+25 C
I
+
/I
*
=50
V
+-
=1V
-55 C
I
+
/I
*
=50
10m
100m
1
10
0.2
0.6
I
+
/I
*
=10
I
+
/I
*
=50
I
+
/I
*
=100
I
+
/I
*
=200
I
+
/I
*
=250
0.8
0.6
0.4
0.2
0
1m
10m
100m
1
10
100
10m
100m
1
10
200
600
10m
100m
1
10
0.4
0.8
1.2
1.6
10m
100m
1
10
0.1
100
1
10
100
0.1
1
10
TYPICAL CHARACTERISTICS
I
- Co
ll
e
ct
o
r
C
urren
t
(A
m
ps)
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
ZTX968
ZTX968
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 1997
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Internet:
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
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