Issue 1 - February 2006
1
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Zetex Semiconductors plc 2006
ZXTN23015CFH
15V, SOT23, NPN medium power transistor
Summary
V
(BR)CEX
> 60V, V
(BR)CEO
> 15V
I
C(CONT)
= 6A
R
CE(SAT)
= 19m typical
V
CE(SAT)
< 30mV @ 1A
P
D
= 1.25W
Complementary part number : ZXTP23015CFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
60V forward blocking voltage
Applications
DC - DC converters
MOSFET and IGBT gate driving
Motor drive
Relay, lamp, and solenoid drive
Ordering information
Device marking
327
Device
Reel size
(inches)
Tape
width
Quantity per REEL
ZXTN23015CFHTA
7
8mm
3000
C
E
Pinout - top view
B
ZXTN23015CFH
Issue 1 - February 2006
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Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
(BR)CEX
60
V
Collector-emitter voltage
V
CEO
15
V
Emitter-base voltage
V
EBO
7.0
V
Peak pulse current
I
CM
12
A
Continuous collector current
(c)
I
C
6
A
Base current
I
B
1.2
A
Power dissipation @ T
A
=25
o
C
(a)
Linear derating factor
(a)
P
D
0.73
5.84
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(b)
Linear derating factor
(b)
P
D
1.05
8.4
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(c)
Linear derating factor
(c)
P
D
1.25
9.6
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(d)
Linear derating factor
(d)
P
D
1.81
14.5
W
mW/
o
C
Operating and storage temperature
T
j
:T
stg
-55 to +150
o
C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
R
JA
171
o
C/W
Junction to ambient
(b)
R
JA
119
o
C/W
Junction to ambient
(c)
R
JA
100
o
C/W
Junction to ambient
(d)
R
JA
69
o
C/W
ZXTN23015CFH
Issue 1 - February 2006
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Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
60
85
V
I
C
=100 A
Collector-emitter breakdown
voltage
V
(BR)CEX
60
85
V
I
C
=100 A,
R
BE
< 1k
OR
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage
V
(BR)CEO
15
23
V
I
C
=10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 S. Duty cycle
2%.
Emitter-base breakdown voltage V
(BR)EBO
7.0
8.3
V
I
E
=100 A
Collector-emitter cut-off current
I
CEX
-
100
nA
V
CE
= 48V,
R
BE
< 1k
OR
-1V < V
BE
< 0.25V
Collector-base cut-off current
I
CBO
<1
20
nA
V
CB
=48V
Emitter-base cut-off current
I
EBO
<1
10
nA
V
EB
=6V
Static forward current transfer
ratio
H
FE
160
300
I
C
=10mA, V
CE
=2V
(*)
200
350
560
I
C
=500mA, V
CE
=2V
(*)
190
330
I
C
=3A, V
CE
=2V
(*)
150
280
I
C
=6A, V
CE
=2V
(*)
Collector-emitter saturation
voltage
V
CE(sat)
7
15
mV
I
C
=0.1A, I
B
=5mA
(*)
22
30
mV
I
C
=1A, I
B
=100mA
(*)
70
90
mV
I
C
=3A, I
B
=60mA
(*)
130
180
mV
I
C
=6A, I
B
=120mA
(*)
Base-emitter saturation voltage
V
BE(sat)
0.83
0.93
V
I
C
=3A, I
B
=60mA
(*)
0.89
0.98
V
I
C
=6A, I
B
=120mA
(*)
Base-emitter turn-on voltage
V
BE(on)
0.81
0.91
V
I
C
=6A, V
CE
=2V
(*)
Transition frequency
f
T
235
MHz
Ic=500mA, V
CE
=2V,
f=50MHz
Output capacitance
C
obo
56
pF
V
CB
=10V, f=1MHz
Delay time
t
(d)
15
ns
V
CC
=5V, I
C
=3A,
I
B1
=I
B2
=150mA
Rise time
t
(r)
38.5
ns
Storage time
t
(stg)
213
ns
Fall time
t
(f)
19.7
ns
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