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Zetex Semiconductors plc 2006
ZXTP23015CFH
15V, SOT23, PNP medium power transistor
Summary
V
(BR)CES
> -15V, V
(BR)CEO
> -15V
V
(BR)ECO
> -6V
I
C(CONT)
= -6A
R
CE(SAT)
= 20m typical
V
CE(SAT)
< -36mV @ -1A
P
D
= 1.25W
Complementary part number ZXTN23015CFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Feature
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
15V forward blocking voltage
6V reverse blocking voltage
Applications
High side disconnect switches
DC - DC converters
MOSFET and IGBT gate driving
Motor drive
Relay, lamp, and solenoid drive
Ordering information
Device marking
317
Device
Reel size
(inches)
Tape width
Quantity per reel
ZXTP23015CFHTA
7
8mm
3000
C
E
Pinout - top view
B
ZXTP23015CFH
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Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
-15
V
Collector-emitter voltage
V
(BR)CES
-15
V
Collector-emitter voltage
V
CEO
-15
V
Emitter-base voltage
V
EBO
-7.0
V
Emitter-collector voltage
V
ECO
-6.0
V
Peak pulse current
I
CM
-10
A
Continuous collector current
(c)
I
C
-5
A
Continuous collector current
(d)
I
C
-6
A
Base current
I
B
-1.2
A
Power dissipation @ T
A
=25
o
C
(a)
Linear derating factor
(a)
P
D
0.73
5.84
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(b)
Linear derating factor
(b)
P
D
1.05
8.4
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(c)
Linear derating factor
(c)
P
D
1.25
9.6
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(d)
Linear derating factor
(d)
P
D
1.81
14.5
W
mW/
o
C
Operating and storage temperature
T
j
:T
stg
-55 to
+150
o
C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
R
JA
171
o
C/W
Junction to ambient
(b)
R
JA
119
o
C/W
Junction to ambient
(c)
R
JA
100
o
C/W
Junction to ambient
(d)
R
JA
69
o
C/W
ZXTP23015CFH
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Zetex Semiconductors plc 2006
Characteristics
ZXTP23015CFH
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Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at T
AMB
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown voltage V
(BR)CBO
-15
-40
V
I
C
=-100 A
Collector-emitter breakdown
voltage
V
(BR)CES
-15
-40
V
I
C
=-100 A
Collector-emitter breakdown
voltage
V
(BR)CEO
-15
-25
V
I
C
=-10mA
(*)
Emitter-base breakdown voltage
V
(BR)EBO
-7.0
-8.2
V
I
E
=-100 A
Emitter-collector breakdown
voltage
V
(BR)ECO
-6.0
-8.5
V
I
E
=-100 A
Collector-emitter cut-off current
I
CES
-20
nA
V
CE
=-12V
Collector-base cut-off current
I
CBO
-20
nA
V
CB
=-12V
Emitter-base cut-off current
I
EBO
-10
nA
V
EB
=-6V
Static forward current transfer
ratio
H
FE
200
380
I
C
=-10mA, V
CE
=-2V
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 S. Duty cycle
2%.
200
350
560
I
C
=-500mA, V
CE
=-2V
140
220
Ic=-6A, V
CE
=-2V
Collector-emitter saturation
voltage
V
CE(sat)
-6
-10
mV
I
C
=-100mA, I
B
=-10mA
(*)
-27
-36
mV
I
C
=-1A, I
B
=-100mA
(*)
-90
-120
mV
I
C
=-3A, I
B
=-60mA
(*)
-140
-190
mV
I
C
=-6A, I
B
=-240mA
(*)
Base-emitter saturation voltage
V
BE(sat)
-0.83 -0.93
V
I
C
=-3A, I
B
=-60mA
(*)
-0.93 -1.03
V
I
C
=-6A, I
B
=-240mA
(*)
Base-emitter turn-on voltage
V
BE(on)
-0.83 -0.93
V
I
C
=-6A, V
CE
=-2V
(*)
Transition frequency
f
T
270
MHz Ic=-500mA, V
CE
=-2V,
f=50MHz
Output capacitance
C
obo
78.4
pF
V
CB
=-10V, f=1MHz
Delay time
t
(d)
14
ns
V
CC
=-5V, I
C
=-3A,
I
B1
=I
B2
=-150mA
Rise time
t
(r)
35
ns
Storage time
t
(stg)
138
ns
Fall time
t
(f)
17.4
ns
ZXTP23015CFH
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Zetex Semiconductors plc 2006
Typical characteristics
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