Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 170nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 60A  •  Input Capacitance (Ciss) @ Vds: 5400pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 150W  •  Mounting Type: Through Hole  •  Package / Case: TO-3P(L) (2-21F1B)