Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V  •  Drain to Source Voltage (Vdss): 900V  •  Gate Charge (Qg) @ Vgs: 70nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 8.5A  •  Input Capacitance (Ciss) @ Vds: 2150pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 90W  •  Mounting Type: Through Hole  •  Package / Case: 2-16F1B