Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 110 mOhm @ 25A, 10V  •  Drain to Source Voltage (Vdss): 500V  •  Gate Charge (Qg) @ Vgs: 280nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 50A  •  Input Capacitance (Ciss) @ Vds: 11000pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 250W  •  Mounting Type: Through Hole  •  Package / Case: TO-3P(L) (2-21F1B)