Производитель: Microsemi-PPG  •  Вредные вещества: RoHS   Без свинца  •  Серия: POWER MOS V®  •  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 1000V (1kV)  •  Gate Charge (Qg) @ Vgs: 630nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 25A  •  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 625W  •  Mounting Type: Through Hole  •  Package / Case: TO-264