Производитель: Microsemi-PPG  •  Вредные вещества: RoHS   Без свинца  •  Серия: POWER MOS V®  •  Rds On (Max) @ Id, Vgs: 600 mOhm @ 10A, 10V  •  Drain to Source Voltage (Vdss): 1200V (1.2kV)  •  Gate Charge (Qg) @ Vgs: 650nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 20A  •  Input Capacitance (Ciss) @ Vds: 9500pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 625W  •  Mounting Type: Through Hole  •  Package / Case: T-MAX