Производитель: Microsemi-PPG  •  Вредные вещества: RoHS   Без свинца  •  Серия: POWER MOS 8™  •  Rds On (Max) @ Id, Vgs: 350 mOhm @ 25A, 10V  •  Drain to Source Voltage (Vdss): 1200V (1.2kV)  •  Gate Charge (Qg) @ Vgs: 560nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 32A  •  Input Capacitance (Ciss) @ Vds: 18200pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 960W  •  Mounting Type: Chassis Mount  •  Package / Case: SOT-227