Производитель: Infineon Technologies  •  Серия: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V  •  Drain to Source Voltage (Vdss): 240V  •  Gate Charge (Qg) @ Vgs: 6.4nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 350mA  •  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Встречается под наим.: BSP89E6327T, SP000011160