Производитель: International Rectifier  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 59nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3.7A  •  Input Capacitance (Ciss) @ Vds: 1820pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 2.5W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)