Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V  •  Drain to Source Voltage (Vdss): 50V  •  Gate Charge (Qg) @ Vgs: 26nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 9.7A  •  Input Capacitance (Ciss) @ Vds: 480pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Standard  •  Power - Max: 40W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 (Straight Leads)  •  Встречается под наим.: *IRF9Z20PBF