Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  •  Drain to Source Voltage (Vdss): 50V  •  Gate Charge (Qg) @ Vgs: 10nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 8.2A  •  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 25W  •  Mounting Type: Surface Mount  •  Package / Case: DPak, TO-252 (2 leads+tab), SC-63