Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 27nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 30A  •  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 48W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)