Производитель: International Rectifier  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 110nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 75A  •  Input Capacitance (Ciss) @ Vds: 5080pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 200W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)