Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 100A  •  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 3.8W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)