Производитель: International Rectifier  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 35nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 105A  •  Input Capacitance (Ciss) @ Vds: 2840pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 110W  •  Mounting Type: Through Hole  •  Package / Case: TO-262-3 (Straight Leads)  •  Встречается под наим.: *IRL8113L