Производитель: IXYS  •  Вредные вещества: RoHS   Без свинца  •  Серия: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 1000V (1kV)  •  Gate Charge (Qg) @ Vgs: 48nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 6A  •  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 180W  •  Mounting Type: Surface Mount  •  Package / Case: TO-268