Производитель: ON Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 18nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3.8A  •  Input Capacitance (Ciss) @ Vds: 630pF @ 16V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 2W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Встречается под наим.: MMDF3N02HDR2G-ND, MMDF3N02HDR2GOSTR