Производитель: ON Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V  •  Drain to Source Voltage (Vdss): 25V  •  Gate Charge (Qg) @ Vgs: 16nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 9.5A  •  Input Capacitance (Ciss) @ Vds: 1400pF @ 20V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.3W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)