Производитель: ON Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 28nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 11A  •  Input Capacitance (Ciss) @ Vds: 2677pF @ 12V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 890mW  •  Mounting Type: Surface Mount  •  Package / Case: 5-DFN, SO8 FL  •  Встречается под наим.: NTMFS4836NT1GOSCT