Производитель: Infineon Technologies  •  Серия: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 38.4nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 21A  •  Input Capacitance (Ciss) @ Vds: 865pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 90W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Встречается под наим.: SPB21N10INCT