Производитель: Infineon Technologies  •  Серия: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 240nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 70A  •  Input Capacitance (Ciss) @ Vds: 4540pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 250W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Встречается под наим.: SP000014005