Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 800 mOhm @ 600mA, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 12nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.3A  •  Input Capacitance (Ciss) @ Vds: 380pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 600mW  •  Mounting Type: Surface Mount  •  Package / Case: 2-3R1B