Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 37nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 6A  •  Input Capacitance (Ciss) @ Vds: 2740pF @ 10V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 600mW  •  Mounting Type: Surface Mount  •  Package / Case: 8-TSSOP  •  Встречается под наим.: TPCS8102DKR