Производитель: Infineon Technologies  •  Серия: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 21nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 11.1A  •  Input Capacitance (Ciss) @ Vds: 1280pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 2.5W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC  •  Встречается под наим.: BSO4410INCT