Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 13.5nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3A  •  Input Capacitance (Ciss) @ Vds: 280pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 20W  •  Mounting Type: Surface Mount  •  Package / Case: 2-7J1B  •  Встречается под наим.: 2SK2201TE16DKR