Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  •  Drain to Source Voltage (Vdss): 900V  •  Gate Charge (Qg) @ Vgs: 25nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3A  •  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 40W  •  Mounting Type: Through Hole  •  Package / Case: 2-10R1B  •  Встречается под наим.: 2SK2700T