Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Toshiba • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V • Drain to Source Voltage (Vdss): 500V • Gate Charge (Qg) @ Vgs: 30nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 8A • Input Capacitance (Ciss) @ Vds: 1300pF @ 10V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 65W • Mounting Type: Through Hole • Package / Case: TO-220FL |