Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V  •  Drain to Source Voltage (Vdss): 800V  •  Gate Charge (Qg) @ Vgs: 34nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 5A  •  Input Capacitance (Ciss) @ Vds: 1080pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 100W  •  Mounting Type: Surface Mount  •  Package / Case: 2-10S2B