Характеристики | Производитель: Toshiba • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V • Drain to Source Voltage (Vdss): 450V • Gate Charge (Qg) @ Vgs: 62nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 17A • Input Capacitance (Ciss) @ Vds: 3100pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 50W • Mounting Type: Through Hole • Package / Case: 2-10U1B |
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Поставщики «2SK3935(Q,M)» | |
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