Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Toshiba • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V • Drain to Source Voltage (Vdss): 600V • Gate Charge (Qg) @ Vgs: 15nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 3A • Input Capacitance (Ciss) @ Vds: 600pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 20W • Mounting Type: Through Hole |