Характеристики | Производитель: Toshiba • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V • Drain to Source Voltage (Vdss): 900V • Gate Charge (Qg) @ Vgs: 45nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 6A • Input Capacitance (Ciss) @ Vds: 1400pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 45W • Mounting Type: Through Hole • Package / Case: 2-10U1B |