Производитель: Toshiba • Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V • Drain to Source Voltage (Vdss): 50V • Gate Charge (Qg) @ Vgs: 36nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 45A • Input Capacitance (Ciss) @ Vds: 1250pF @ 10V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 100W • Mounting Type: Through Hole • Package / Case: 2-16C1B (TO-247 N)
Архив документации
2SK2550 - N Channel Mos Type (high Speed, High Voltage Switching, Chopper Regulator, Dc-dc Converter and Motor Drive Applications) • Полевые МОП транзисторы
HongKong Teyou Huicheng Electronic Technology Limited, Шэньчжэнь
