Производитель: Toshiba • Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V • Drain to Source Voltage (Vdss): 50V • Gate Charge (Qg) @ Vgs: 25nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 20A • Input Capacitance (Ciss) @ Vds: 900pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 40W • Mounting Type: Through Hole • Package / Case: 2-7B1B
Архив документации
2SK2614 - N Channel Mos Type (high Speed, High Voltage Switching, Chopper Regulator, Dc-dc Converter and Motor Drive Applications) • Полевые МОП транзисторы