Характеристики | Производитель: Microsemi-PPG • Вредные вещества: RoHS Без свинца • Серия: POWER MOS V® • Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V • Drain to Source Voltage (Vdss): 1000V (1kV) • Gate Charge (Qg) @ Vgs: 500nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 19A • Input Capacitance (Ciss) @ Vds: 7900pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 450W • Mounting Type: Chassis Mount • Package / Case: SOT-227 |