Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Microsemi-PPG • Вредные вещества: RoHS Без свинца • Серия: POWER MOS V® • Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V • Drain to Source Voltage (Vdss): 200V • Gate Charge (Qg) @ Vgs: 435nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 100A • Input Capacitance (Ciss) @ Vds: 10200pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 520W • Mounting Type: Through Hole • Package / Case: T-MAX |