Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Microsemi-PPG • Вредные вещества: RoHS Без свинца • Серия: POWER MOS V® • Rds On (Max) @ Id, Vgs: 150 mOhm @ 17.5A, 10V • Drain to Source Voltage (Vdss): 600V • Gate Charge (Qg) @ Vgs: 475nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 35A • Input Capacitance (Ciss) @ Vds: 9000pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 450W • Mounting Type: Chassis Mount • Package / Case: SOT-227 |