Характеристики | Производитель: Infineon Technologies • Серия: SIPMOS® • Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V • Drain to Source Voltage (Vdss): 240V • Gate Charge (Qg) @ Vgs: 5.5nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 260mA • Input Capacitance (Ciss) @ Vds: 97pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 1W • Mounting Type: Surface Mount • Package / Case: SOT-89 • Встречается под наим.: BSS87E6433T, SP000082233 |