Производитель: Diodes Inc  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 58.3nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 12A  •  Input Capacitance (Ciss) @ Vds: 2555pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 2W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)