Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/3dmodels/41548.gif) Производитель: Vishay/Siliconix • Серия: HEXFET® • Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V • Drain to Source Voltage (Vdss): 50V • Gate Charge (Qg) @ Vgs: 39nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 18A • Input Capacitance (Ciss) @ Vds: 900pF @ 25V • FET Polarity: P-Channel • FET Feature: Standard • Power - Max: 74W • Mounting Type: Surface Mount • Package / Case: D²Pak, TO-263 (2 leads + tab) |