Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/vishayir/123424.gif) Производитель: Vishay/Siliconix • Серия: HEXFET® • Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V • Drain to Source Voltage (Vdss): 50V • Gate Charge (Qg) @ Vgs: 13nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 1.7A • Input Capacitance (Ciss) @ Vds: 250pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 1W • Mounting Type: Through Hole • Package / Case: 4-DIP, HVMDIP • Встречается под наим.: *IRFD010 |