Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Vishay/Siliconix • Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V • Drain to Source Voltage (Vdss): 50V • Gate Charge (Qg) @ Vgs: 10nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 8.2A • Input Capacitance (Ciss) @ Vds: 250pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 25W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) |