Характеристики | Производитель: Vishay/Siliconix • Серия: HEXFET® • Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V • Drain to Source Voltage (Vdss): 60V • Gate Charge (Qg) @ Vgs: 30nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 28A • Input Capacitance (Ciss) @ Vds: 680pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 68W • Mounting Type: Surface Mount • Package / Case: D²Pak, TO-263 (2 leads + tab) |