Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/irf/123345.gif) Производитель: International Rectifier • Серия: HEXFET® • Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V • Drain to Source Voltage (Vdss): 30V • Gate Charge (Qg) @ Vgs: 60nC @ 4.5V • Current - Continuous Drain (Id) @ 25° C: 116A • Input Capacitance (Ciss) @ Vds: 3290pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 3.8W • Mounting Type: Surface Mount • Package / Case: D²Pak, TO-263 (2 leads + tab) |