Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Vishay/Siliconix • Серия: HEXFET® • Rds On (Max) @ Id, Vgs: 16 mOhm @ 29A, 7V • Drain to Source Voltage (Vdss): 20V • Gate Charge (Qg) @ Vgs: 43nC @ 4.5V • Current - Continuous Drain (Id) @ 25° C: 48A • Input Capacitance (Ciss) @ Vds: 2000pF @ 15V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 69W • Mounting Type: Through Hole • Package / Case: I²Pak, TO-262 (3 straight leads + tab) • Встречается под наим.: *IRL3202L |