Характеристики | ![Скрыть](/static/search/close.gif) Производитель: ON Semiconductor • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V • Drain to Source Voltage (Vdss): 40V • Gate Charge (Qg) @ Vgs: 88nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 116A • Input Capacitance (Ciss) @ Vds: 4000pF @ 32V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 150W • Mounting Type: Surface Mount • Package / Case: D²Pak, TO-263 (2 leads + tab) |
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