Характеристики | ![Скрыть](/static/search/close.gif) Производитель: ON Semiconductor • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V • Drain to Source Voltage (Vdss): 16V • Gate Charge (Qg) @ Vgs: 10.5nC @ 4.5V • Current - Continuous Drain (Id) @ 25° C: 7.6A • Input Capacitance (Ciss) @ Vds: 702pF @ 12V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 1.2W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) |
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