Характеристики | ![Скрыть](/static/search/close.gif) Производитель: ON Semiconductor • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V • Drain to Source Voltage (Vdss): 30V • Gate Charge (Qg) @ Vgs: 13nC @ 4.5V • Current - Continuous Drain (Id) @ 25° C: 9.8A • Input Capacitance (Ciss) @ Vds: 1538pF @ 12V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 1.3W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) |
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