Производитель: ON Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 6.6nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 6.9A  •  Input Capacitance (Ciss) @ Vds: 770pF @ 12V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.26W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)